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HiPerFET TM
VMO 550-01F
V DSS
= 100 V
MOSFET Module
N-Channel Enhancement Mode
G
D
I D25 = 590 A
R DS(on) = 2.1 m W
E 72873
Preliminary Data
KS
S
D
S
G
KS
Symbol
Test Conditions
Maximum Ratings
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 10 k W
100
100
V
V
V GS
V GSM
I D25
I D80
Continuous
Transient
T S = 25 ° C
T S = 80 ° C
± 20
± 30
590
440
V
V
A
A
D = Drain S = Source
KS = Kelvin Source G = Gate
I DM
P D
T J
T JM
T S = 25 ° C
T C = 25 ° C
T S = 25 ° C
pulse width limited by T JM
2360
2200
1470
-40 ...+150
150
A
W
W
° C
° C
Features
T stg
-40 ... +125
° C
q
q
International standard package
D irect C opper B onded Al 2 O 3 ceramic
V ISOL
50/60 Hz
I ISOL ￡ 1 mA
t = 1 min
t=1s
3000
3600
V~
q
q
base plate
Isolation voltage 3600 V~
Low R DS(on) HDMOS TM process
M d
Weight
Mounting torque (M6)
Terminal connection torque (M5)
typical including screws
2.25-2.75/20-25 Nm/lb.in.
2.5-3.7/22-33 Nm/lb.in.
250
g
q
q
Low package inductance for high
speed switching
Kelvin Source contact for easy drive
Applications
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
q
q
AC motor speed control for electric
vehicles
DC servo and robot drives
q
Switched-mode and resonant-mode
V DSS
V GS = 0 V, I D = 6 mA
100
V
power supplies
V GS(th)
V DS = 20 V, I D = 110 mA
3
6
V
q
DC choppers
I GSS
V GS = ± 20 V DC, V DS = 0
± 500 nA
Advantages
I DSS
V DS = 0.8 ? V DSS
V GS = 0 V
T J = 25 ° C
T J = 125 ° C
3 mA
12 mA
q
q
Easy to mount
Space and weight savings
R DS(on)
V GS = 10 V, I D = 0.5 ? I D25
Pulse test, t ￡ 300 m s, duty cycle d ￡ 2 %
2.1 m W
q
q
High power density
Low losses
IXYS reserves the right to change limits, test conditions and dimensions.
? 2000 IXYS All rights reserved
1-2
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